Flexible organic light-emitting display device and method of manufacturing the same

ABSTRACT

A flexible organic light-emitting display device includes a display panel which displays an image with light, including: an organic light-emitting device which emits the light; and a plurality of organic layers stacked around the organic light-emitting device, a portion of the plurality of organic layers being exposed outside the display panel, and a metal oxide layer on the display panel, the metal oxide layer contacting the portions of the plurality of organic layers exposed outside the display panel.

This application claims priority to Korean Patent Application No.10-2016-0163904, filed on Dec. 2, 2016, and all the benefits accruingtherefrom under 35 U.S.C. § 119, the content of which in its entirety isherein incorporated by reference.

BACKGROUND 1. Field

One or more embodiments relate to flexible organic light-emittingdisplay devices, and more particularly, to an organic light-emittingdisplay device having an improved structure for reducing or effectivelypreventing infiltration of oxygen or moisture thereto, and a method ofmanufacturing the organic light-emitting display device.

2. Description of the Related Art

General flexible organic light-emitting display devices include adisplay panel including a display unit on a flexible substrate, and thusa display panel of the display unit is bendable to have a moderatecurvature as necessary.

The display unit includes an organic light-emitting device having anemission layer including an organic material between an anode and acathode. When voltages are respectively applied to the anode and thecathode, holes injected into the anode and electrons injected into thecathode recombine together in the emission layer to generate excitons.When the excitons fall from an excited state to a ground state, lightemission occurs, and at the same time, an image is realized.

SUMMARY

When an emission layer of a display unit in an organic light-emittingdevice, comes in contact with moisture or oxygen, emission propertiesimmediately degrade, and thus a structure for reducing or effectivelypreventing this degradation is desired.

In particular, the organic light-emitting device may include an organiclayer therein. When an end portion of the organic layer is exposed tothe atmosphere through a manufacturing process such as cutting or holeformation, a possibility of infiltration of moisture and oxygen throughthe exposed end portion increases. Thus, measures to reduce oreffectively prevent infiltration of moisture and oxygen are desired.

One or more embodiments include a flexible organic light-emittingdisplay device capable of effectively preventing infiltration ofmoisture and oxygen through an end portion of an organic layer in theflexible organic light-emitting display device, and a method ofmanufacturing the flexible organic light-emitting display device.

Additional features will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

According to one or more embodiments, a flexible organic light-emittingdisplay device includes a display panel which displays an image withlight, including: an organic light-emitting device which emits thelight; and a plurality of organic layers stacked around the organiclight-emitting device, a portion of the plurality of organic layersbeing exposed outside the display panel, and a metal oxide layer on thedisplay panel, the metal oxide layer contacting the portions of theplurality of organic layers exposed outside the display panel.

The plurality of organic layers may include an organic base substrate onwhich the organic light-emitting device is disposed, an organicpixel-defining layer which defines a pixel region of the organiclight-emitting device, on the organic base substrate, an organicinsulation layer of a thin film transistor connected to the organiclight-emitting device, on the organic base substrate, and an organicencapsulation layer of a thin film encapsulation layer which covers theorganic light-emitting device, the organic encapsulation layer disposedopposite to the organic base substrate with respect to the organiclight-emitting device.

A light-emitting region may be provided in plurality each including thethin film transistor and the organic light-emitting device. The flexibleorganic light-emitting display device may further include betweenlight-emitting regions adjacent to each other, an accommodation hole atwhich end portions of each of the organic pixel-defining layer, theorganic insulation layer and the organic encapsulation layer are exposedto outside the display panel. At the accommodation hole, the metal oxidelayer may be on each of the exposed end portions of the organicpixel-defining layer, the organic insulation layer and the organicencapsulation layer.

A light-emitting region may be provided in plurality each including thethin film transistor and the organic light-emitting device. The flexibleorganic light-emitting display device may further include betweenlight-emitting regions adjacent to each other, an accommodation hole atwhich a portion of the organic base substrate is exposed to outside thedisplay panel, and the metal oxide layer may be on the exposed portionof the organic base substrate.

The thin film transistor may include an active layer on the organic basesubstrate, a gate insulating layer covering the active layer, a gateelectrode on the gate insulating layer and facing the active layer, aninterlayer insulating layer covering the gate electrode, a sourceelectrode and a drain electrode on the interlayer insulating layer to berespectively connected to different portions of the active layer, and avia layer covering the source electrode and the drain electrode. Each ofthe gate insulating layer, the interlayer insulating layer and the vialayer may extend from the thin film transistor to outside the thin filmtransistor. The organic insulation layer may include the gate insulatinglayer, the interlayer insulating layer and the via layer. A portion ofthe organic insulation layer including the gate insulating layer, theinterlayer insulating layer and the via layer may be exposed to outsidethe display panel. The metal oxide layer may be on the exposed portionof the organic insulation layer including the gate insulating layer, theinterlayer insulating layer and the via layer.

A portion of the organic pixel-defining layer may be exposed to outsidethe display panel, and the metal oxide infiltrated layer may be on theexposed portion of the organic pixel-defining layer.

A portion of the organic encapsulation layer may be exposed to outsidethe display panel, and the metal oxide layer may be on the organicencapsulation layer.

According to one or more embodiments, a method of manufacturing aflexible organic light-emitting display device includes: providing adisplay panel which displays an image with light, including: providingan organic light-emitting device which emits the light, and stacking aplurality of organic layers around the organic light-emitting device,portions of the plurality of organic layers being exposed to outside thedisplay panel; and forming a metal oxide layer on the exposed portionsof the plurality of organic layers, by using a sequential vapordeposition method.

The plurality of organic layers may include an organic base substrate onwhich the organic light-emitting device is disposed, an organicpixel-defining layer which defines a pixel region of the organiclight-emitting device, on the organic base substrate, an organicinsulation layer of a thin film transistor connected to the organiclight-emitting device, on the organic base substrate, and an organicencapsulation layer of a thin film encapsulation layer which covers theorganic light-emitting device, the organic encapsulation layer disposedopposite to the organic base substrate with respect to thelight-emitting device.

The providing a display panel may further include defining alight-emitting region in plurality each including the thin filmtransistor and the organic light-emitting device, on the organic basesubstrate, the stacking the plurality of organic layers may includeforming an accommodation hole at an area between adjacent light-emittingregions, by removing a portion of the plurality of organic layers of thedisplay panel, at the area between adjacent light-emitting regions, theforming the accommodation hole may include exposing to outside thedisplay panel, at the area between adjacent light-emitting regions, aportion of the organic base substrate and the portions of the pluralityof organic layers, and the forming the metal oxide layer may dispose themetal oxide layer on the exposed portions of the plurality of organiclayers.

The metal oxide layer may be formed on the exposed portion of theorganic base layer.

The thin film transistor may include an active layer on the organic basesubstrate, a gate insulating layer covering the active layer, a gateelectrode on the gate insulating layer and facing the active layer, aninterlayer insulating layer covering the gate electrode, a sourceelectrode and a drain electrode on the interlayer insulating layer to berespectively connected to different portions of the active layer, and avia layer covering the source electrode and the drain electrode. Each ofthe gate insulating layer, the interlayer insulating layer and the vialayer may extend from the thin film transistor to outside the thin filmtransistor. The organic insulation layer of the display panel mayinclude the gate insulating layer, the interlayer insulating layer andthe via layer. A portion of the organic insulation layer including thegate insulating layer, the interlayer insulating layer and the via layermay be exposed to outside the display panel. The metal oxide layer maybe formed on the exposed portion of the organic insulation layerincluding the gate insulating layer, the interlayer insulating layer andthe via layer.

A portion of the organic pixel-defining layer may be exposed to outsidethe display panel, and the metal oxide infiltrated layer may be formedon the exposed portion of the organic pixel-defining layer.

A portion of the organic encapsulation layer may be exposed to outsidethe display panel, and the metal oxide layer may be formed on theexposed portion of the organic encapsulation organic layer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other features will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings in which:

FIG. 1 is an enlarged cross-sectional view of an embodiment of aflexible organic light-emitting display device according to theinvention; and

FIGS. 2 to 4 are enlarged cross-sectional views illustrating anembodiment of a process of manufacturing the flexible organiclight-emitting display device shown in FIG. 1.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, where like referencenumerals refer to like elements throughout. In this regard, the presentembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, theembodiments are merely described below, by referring to the figures, toexplain features of the present description.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Expressions such as “atleast one of”, when preceding a list of elements, modify the entire listof elements and do not modify the individual elements of the list.

It will be understood that although the terms “first”, “second”, etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another.

As used herein, the singular forms “a” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be further understood that the terms “comprises” and/or“comprising” used herein specify the presence of stated features orcomponents, but do not preclude the presence or addition of one or moreother features or components.

It will be understood that when a layer, region, or element is referredto as being related to another element such as being “on” another layer,region, or element, it can be directly or indirectly formed on the otherlayer, region, or element. That is, for example, intervening layers,regions, or elements may be present. In contrast, when a layer, region,or element is referred to as being related to another element such asbeing “directly on” another layer, region, or element, no interveninglayers, regions, or elements may be present.

Sizes of elements in the drawings may be exaggerated for convenience ofexplanation. In other words, since sizes and thicknesses of componentsin the drawings are arbitrarily illustrated for convenience ofexplanation, the following embodiments are not limited thereto.

When a certain embodiment may be implemented differently, a specificprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The exemplary term“lower,” can therefore, encompasses both an orientation of “lower” and“upper,” depending on the particular orientation of the figure.Similarly, if the device in one of the figures is turned over, elementsdescribed as “below” or “beneath” other elements would then be oriented“above” the other elements. The exemplary terms “below” or “beneath”can, therefore, encompass both an orientation of above and below.

It will be understood that when a layer, region, or component isreferred to as being related to another layer, region, or component suchas being “connected” to another layer, region, or component, it may bephysically or electrically connected to the other layer, region, orcomponent.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

FIG. 1 is an enlarged cross-sectional view of an embodiment of aflexible organic light-emitting display device according to theinvention.

One or more embodiment of the flexible organic light-emitting displaydevice includes a display panel which displays an image with light. Thedisplay panel and/or the overall flexible organic light-emitting displaydevice is disposed in a plane defined by first and second directionswhich cross each other. A thickness direction of the display paneland/or the overall flexible organic light-emitting display deviceextends in a third direction, crossing each of the first and seconddirections, including but not limited to being orthogonal thereto. InFIG. 1, the thickness (third) direction is vertical, while the firstand/or second direction is horizontal.

The flexible organic light-emitting display device includes, as thedisplay panel, a flexible panel 100 capable of being flexibly bent, andmay be used, for example, as a display panel in electronic devices suchas a mobile phone. The flexible panel 100 is a structure in which aswitching element such as a thin film transistor TFT and an organiclight-emitting device EL for realizing an image, and an encapsulationlayer 140 that covers and protects the thin film transistor TFT and theorganic light-emitting device EL are stacked on a relatively flexiblebase organic layer 110. The thin film transistor TFT controls or drivesthe organic light-emitting device EL to generate and emit light used informing an image displayed by the flexible organic light-emittingdisplay device. The thin film transistor TFT and the organiclight-emitting device EL may be provided in plurality on the flexiblebase organic layer 110.

Since the flexible base organic layer 110, which is effectively aflexible substrate, is used instead of a relatively rigid glasssubstrate, the flexible panel 100 may be bent or rolled. The baseorganic layer 110 may include or be formed using, for example, polyimide(PI). Although only two thin film transistors TFT and two organiclight-emitting devices EL are illustrated in FIG. 1 for convenience ofillustration, a relatively greater number of thin film transistors TFTand/or organic light-emitting devices EL may be arranged on the baseorganic layer 110.

Reference numeral 100 a indicates an accommodation hole disposed orformed between light-emitting regions of the display panel and/orflexible organic light-emitting display device, each including a thinfilm transistor TFT and an organic light-emitting device EL. Thelight-emitting regions may correspond to pixels of the display paneland/or flexible organic light-emitting display device at which an imageis generated and/or displayed thereby. In an embodiment, for example,the accommodation hole 100 a serves as a hole for installing an input oroutput device such as a camera lens or the like of a mobile phone. Theview in FIG. 1 may represent the accommodation hole 100 a relative tothe first direction and the second direction, such that theaccommodation hole 100 a may be a discrete opening of the flexible panel100 in a top plan view (e.g., a view in a direction normal to the planedefined by the first and second directions.

However, in an embodiment of manufacturing the flexible organiclight-emitting display device, since the accommodation hole 100 a isformed by piercing layers of the flexible panel 100, portions of organiclayers of the flexible panel 100, which are vulnerable to infiltrationof oxygen and moisture, may be exposed to the atmosphere at an areaoutside the flexible panel 100 and/or the flexible organiclight-emitting display device. A method of reducing or effectivelysolving this problem will be described below.

An active (A) layer 121 of the thin film transistor TFT is disposed orformed on a buffer layer 111 that is adjacent to the base organic layer110. Source and drain regions doped with N-type or P-type impurities ata relatively high concentration are disposed or formed by or at opposingends of the active layer 121, respectively. The active layer 121 mayinclude an oxide semiconductor. In an embodiment, for example, theactive layer 121 may include an oxide semiconductor. The oxidesemiconductor may include an oxide of a material selected from Group 4,12, 13, and 14 metal elements (such as, zinc (Zn), indium (In), gallium(Ga), stannum (Sn), cadmium (Cd), germanium (Ge), and hafnium (Hf)) anda combination thereof. In an embodiment, for example, the active layer121 may include G-I—Z—O [(In2O3)a(Ga2O3)b(ZnO)c], where a, b and c arereal numbers that respectively satisfy and c>0.

A gate (G) electrode 122 is disposed or formed over the active layer 121with a gate insulating (GI) layer 112 between the gate electrode 122 andthe active layer 121. A source (S) electrode 123 and a drain (D)electrode 124 are disposed or formed over the gate electrode 122, andthe source electrode 123 and the drain electrode 124 are respectivelyconnected to the source and drain regions of the active layer 121. Aninterlayer insulating (ILD) layer 113 is included between the gateelectrode 122, and each of the source electrode 123 and the drainelectrode 124. A via (VIA) layer 114 is interposed between an anode 131of the organic light-emitting device EL, and each of the sourceelectrode 123 and the drain electrode 124. The gate insulating layer112, the interlayer insulating layer 113 and the via layer 114 eachinclude an organic material. The gate insulating layer 112, theinterlayer insulating layer 113 and the via layer 114 together form aplurality of organic layers that together function as an insulatinglayer in the thin film transistor TFT.

Reference numeral 115 indicates a pixel-defining layer (PDL) and theorganic light-emitting device EL is disposed or formed in an opening ofthe pixel-defining layer 115. The pixel-defining layer 115 is an organiclayer including polyimide material or the like.

The organic light-emitting device EL generates and emits light undercontrol of the thin film transistor TFT, to display predetermined imageinformation. The organic light-emitting device EL may emit colored lightsuch as red, green and blue light, as electrical current flows into orthrough the organic light-emitting device EL. The organic light-emittingdevice EL includes the anode 131, which is connected to the drainelectrode 124 of the thin film transistor TFT and receives a positivepower voltage from the drain electrode 124, a cathode 133, whichcommonly covers the light emitting regions and supplies a negative powervoltage to the organic light-emitting device EL, and an emission layer132, which is between the anode 131 and the cathode 133 to emit light.

A hole injection layer (“HIL”), a hole transport layer (“HTL”), anelectron transport layer (“ETL”), an electron injection layer (“EIL”),and the like may be stacked within or adjacent to the emission layer132.

In an embodiment, the emission layer 132 may be discretely disposed orformed in each pixel to form a single unit pixel that includes acollection of pixels that individually emit red, green and blue lightbeams. The emission layers 132 disposed or formed in the pixels may bespaced apart from one another, such as along the first and/or seconddirections. Within a pixel, the pixel-defining layer 115 may define apixel region at which light is generated and emitted.

Alternatively, an emission layer may be commonly disposed or formed overan entirety of the pixels and/or unit pixels, regardless of locations ofthe pixels. In this case, the emission layer 132 may be formed bystacking a light-emitting substance that emits a red light, alight-emitting substance that emits a green light and a light-emittingsubstance that emits a blue light on one another, or by mixing alight-emitting substance that emits a red light, a light-emittingsubstance that emits a green light and a light-emitting substance thatemits a blue light. Any combination of other various colors that iscapable of emitting a white light may be utilized.

The flexible panel 100 may further include a color converting layerand/or a color filter that coverts the white light generated and emittedby the emission layer 132 into a light of a corresponding color.

The encapsulation layer 140 may be disposed or formed on the cathode133, to form an outer surface of the flexible panel 100. Theencapsulation layer 140 may include an encapsulation organic layer 141and an encapsulation inorganic layer 142 that are alternately stacked oneach other.

As described above, in an embodiment of manufacturing the flexibleorganic light-emitting display device, the accommodation hole 100 a isformed by piercing through layers at an area between the light-emittingregions, to form an empty space at the area. The pre-pierced areaincludes no thin film transistor TFT and no organic light-emittingdevice EL, but may include one or all layers of the flexible panel 100except those at the thin film transistor TFT and organic light-emittingdevice EL. The pre-pierced area may particularly include theencapsulation layer 140 completely covering organic layers of theflexible panel 100. A camera lens or the like of a mobile phone, may bedisposed at the empty space formed in the flexible panel 100. In formingthe empty space at the area between the light-emitting regions, portionsof the organic layers once completely covered by the encapsulation layer140 are exposed to the atmosphere due to the formation of theaccommodation hole 100 a.

The base organic layer 110 is an organic layer, the gate insulatinglayer 112, the interlayer insulating layer 113 and the via layer 114,which are insulating layers of the thin film transistor TFT, are alsoorganic layers, and the pixel-defining layer 115 of the light-emittingdevice EL and the encapsulation organic layer 141 of the encapsulationlayer 140 are also organic layers. When the accommodation hole 100 a isnot yet formed in these layers, these layers are covered with theencapsulation inorganic layer 142 of the encapsulation layer 140, andinfiltration of oxygen and moisture may be reduced or effectivelyprevented by the encapsulation inorganic layer 142. In an embodiment ofmanufacturing the flexible organic light-emitting display device, aglass substrate (not shown), which is a carrier substrate, is attachedto an exposed bottom surface of the base organic layer 110 duringmanufacturing processes, the glass substrate may reduce or effectivelyprevent infiltration of oxygen and moisture to the base organic layer110 during manufacturing. Since the glass substrate is detached later inmanufacturing the flexible organic light-emitting display device and aprotective film is immediately attached to the base organic layer 110,the infiltration of oxygen and moisture from the bottom surface of thebase organic layer 110 is again reduced or effectively prevented.

However, when the accommodation hole 100 a is formed by piercing asdescribed above, end portions of all the organic layers at theaccommodation hole 100 a are exposed to the atmosphere outside theflexible panel 100 and/or the flexible organic light-emitting displaydevice. Therefore, if the end portions of the organic layers are left inthis exposed state, oxygen and moisture may relatively easily infiltratethrough the end portions exposed to the atmosphere, and thus the organiclight-emitting device EL surrounded by the exposed organic layers may bedeteriorated.

Therefore, in one or more embodiment according to the invention, inorder to prevent infiltration and oxygen to the exposed organic layers,a metal oxide material layer 101 is disposed or formed on an end surfaceof an organic layer at the accommodation hole 100 a and exposed to theatmosphere at the accommodation hole 100 a. The metal oxide materiallayer 101 is in contact with the end surface of the organic layerexposed to outside the flexible panel 100. The exposed end surface ofthe organic layer is not exposed to the atmosphere since the metal oxidematerial layer 101 covers the end surface.

In an embodiment of manufacturing the flexible organic light-emittingdisplay device, the metal oxide material layer 101 may be is formed byinfiltrating metal oxide, for example, AlOx, TiOx, ZrOx, or Hf, into asurface according to a sequential vapor deposition method. The metaloxide infiltrated layer 101 functions as a barrier layer that preventsinfiltration of moisture and oxygen toward the organic light-emittingdevice EL.

In the sequential vapor deposition method, a metal oxide material(infiltrated) layer is formed by diffusing metal oxide of a source gasinto a minute empty space of a target organic layer. The sequentialvapor deposition method is conducted by inserting a target into aprocessing chamber and injecting a source gas into the processingchamber for diffusing metal oxide of a source gas into a minute emptyspace of a target organic layer. An infiltrated layer may also bepartially formed on an end portion of an inorganic layer such as theencapsulation inorganic layer 142, the cathode 133 or the buffer layer111. However, since the inorganic material of the encapsulationinorganic layer 142, the cathode 133 or the buffer layer 111 is arelatively dense barrier layer, a metal oxide infiltrated layer is notnecessarily formed thereon.

Accordingly, in an embodiment of manufacturing the flexible organiclight-emitting display device, when the accommodation hole 100 a isdisposed or formed in the flexible panel 100 to expose the base organiclayer 110 and other organic layers thereon, a resultant structure isplaced in a processing chamber and a source gas is injected into theprocessing chamber. By the source gas injected into the processingchamber having the resultant structure therein, metal oxide is diffusedand infiltrated into end portions of the organic layers 110, 112, 113,114, 115 and 141, exposed through and at the accommodation hole 100 a,according to the sequential vapor deposition method, and thus the metaloxide infiltrated layer 101 is formed.

As a result, even when a separate inorganic layer for reducing oreffectively preventing infiltration of moisture and oxygen is notincluded, the metal oxide infiltrated layer 101 functions as a barrierlayer similar to a separate inorganic layer functioning as a barrierlayer.

Thus, the metal oxide infiltrated layer 101 effectively preventsmoisture or oxygen from being infiltrated through the exposed organiclayers 110, 112, 113, 114, 115, and 141 toward the organiclight-emitting device EL. In addition, because no separate inorganiclayers are included, suitable flexibility may be maintained, and thusflexibility that is necessary for the flexible organic light-emittingdisplay device may be sufficiently secured.

In an embodiment of manufacturing the flexible organic light-emittingdisplay device, where an individual flexible panel 100 is separated fromanother individual flexible panel 100 in a same mother substrate, suchas by cutting, an outer end (or edge) portion of the flexible panel 100may be exposed to outside the individual flexible panel 100. While notexplicitly illustrated, a structure at the exposed edge portion of anindividual flexible display panel 100 may be similar to that structureat the accommodation hole 100 a in FIG. 1. Different from FIG. 1, aportion of the flexible base layer 110 may be further removed at theaccommodation hole 100 a to further expose an end portion thereof. Assuch, each end portion from the flexible base layer 110 through theencapsulation layer 140 may be covered with the metal oxide layer 101 informing an individual flexible panel 100 from a mother substrateincluding a plurality of individual flexible panels to be separated fromeach other.

The flexible panel 100 of the flexible organic light-emitting displaydevice may be manufactured as follows.

As shown in FIG. 2, a stack structure in which the buffer layer 111 tothe encapsulation layer 140 are stacked on the base organic layer 110,is formed. At an area between the light-emitting regions, a pre-piercedarea includes no thin film transistor TFT and no organic light-emittingdevice EL, but includes portions of other layers of the flexible panel100 except for elements of thin film transistor TFT and organiclight-emitting device EL. The pre-pierced area particularly includes theencapsulation layer 140 completely covering organic layers of theflexible panel 100, even at the area between the light-emitting regions.

As shown in FIG. 3, the accommodation hole 100 a is formed at the areabetween the light-emitting regions, to form an empty space between thelight-emitting regions. Portions of the organic layers of the flexiblepanel 100, at the area between the light-emitting regions, are removedto form the empty space. An input or output device, such as a mobilephone camera lens or the like may be installed at the empty spacebetween the light-emitting regions.

In forming the empty space at the area between the light-emittingregions, portions of organic layers once completely covered by theencapsulation layer 140 are exposed to the atmosphere outside theflexible panel 100 due to the formation of the accommodation hole 100 a.

As shown in FIG. 4, a metal oxide (infiltrated layer) 101 is formed onportions of the organic layers which are exposed at the accommodationhole 100 a.

In an embodiment of forming a flexible organic light-emitting displaydevice, the flexible panel 100 including the exposed portions of theorganic layers, is placed in a processing chamber and a source gas isinjected into the processing chamber to allow metal oxide to diffuseinto portions of the organic layers 110, 112, 113, 114, 115 and 141,exposed to the atmosphere at the accommodation hole 100 a, according toa sequential vapor deposition method. Thus, the metal oxide infiltratedlayer 101 is formed as shown in FIG. 4.

As a result of the metal oxide infiltrated layer 101 covering exposedportions of organic layers at the accommodation hole 100 a, infiltrationof moisture or oxygen into the organic light-emitting device EL throughthe exposed portions of the organic layers 110, 112, 113, 114, 115, and141 is reduced or effectively prevented. Thus, an organic light-emittingdisplay device with relatively stable performance and relatively lowpossibility of deterioration is obtained.

According to one or more embodiment of a flexible organic light-emittingdisplay device and a method of manufacturing the same as describedabove, since a function of a barrier layer selectively at exposedportions of organic layers may be achieved without including a separateinorganic layer, a reliable flexible organic light-emitting displaydevice capable of effectively preventing infiltration of oxygen ormoisture thereto without losing flexibility may be realized.

In the above-described embodiments, the case where the end portions ofthe organic layers are exposed to the atmosphere through theaccommodation hole 100 a at an inner portion of the flexible panel 100is exemplified. However, the function of a barrier layer may be furthersecured by forming a metal oxide infiltrated layer 101 on an exposedouter end portion of the flexible panel 100 by using a sequential vapordeposition method described above.

In an embodiment, for example, where an individual flexible panel 100 isseparated from another individual flexible panel 100, an outer endportion of the flexible panel 100 may be exposed to the atmosphere bycutting the individual flexible panel 100 to be separated from anotherindividual flexible panel 100. Similar to that described for FIG. 4, thefunction of a barrier layer may be further secured by forming a metaloxide infiltrated layer 101 on the exposed outer end portion of theindividual flexible panel 100 by using the sequential vapor depositionmethod described above.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features within each embodiment shouldtypically be considered as available for other similar features in otherembodiments.

While one or more embodiments have been described with reference to thefigures, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made therein withoutdeparting from the spirit and scope as defined by the following claims.

What is claimed is:
 1. A flexible organic light-emitting display devicecomprising: a display panel which displays an image with light,comprising: an organic light-emitting device which emits the light; anda plurality of organic layers stacked around the organic light-emittingdevice, a portion of the plurality of organic layers being exposedoutside the display panel, and a metal oxide layer on the display panel,the metal oxide layer contacting the portions of the plurality oforganic layers exposed outside the display panel.
 2. The flexibleorganic light-emitting display device of claim 1, wherein the pluralityof organic layers comprise: an organic base substrate on which theorganic light-emitting device is disposed, an organic pixel-defininglayer which defines a pixel region of the organic light-emitting device,on the organic base substrate, an organic insulation layer of a thinfilm transistor connected to the organic light-emitting device, on theorganic base substrate, and an organic encapsulation layer of a thinfilm encapsulation layer which covers the organic light-emitting device,the organic encapsulation layer disposed opposite to the organic basesubstrate with respect to the organic light-emitting device.
 3. Theflexible organic light-emitting display device of claim 2, wherein alight-emitting region is provided in plurality each including the thinfilm transistor and the organic light-emitting device, furthercomprising between light-emitting regions adjacent to each other, anaccommodation hole at which end portions of each of the organicpixel-defining layer, the organic insulation layer and the organicencapsulation layer are exposed to outside the display panel, wherein atthe accommodation hole, the metal oxide layer is on each of the exposedend portions of the organic pixel-defining layer, the organic insulationlayer and the organic encapsulation layer.
 4. The flexible organiclight-emitting display device of claim 2, wherein a light-emittingregion is provided in plurality each including the thin film transistorand the organic light-emitting device, further comprising betweenlight-emitting regions adjacent to each other, an accommodation hole atwhich a portion of the organic base substrate is exposed to outside thedisplay panel, and the metal oxide layer is on the exposed portion ofthe organic base substrate.
 5. The flexible organic light-emittingdisplay device of claim 2, wherein the thin film transistor comprises:an active layer on the organic base substrate, a gate insulating layercovering the active layer, a gate electrode on the gate insulating layerand facing the active layer, an interlayer insulating layer covering thegate electrode, a source electrode and a drain electrode on theinterlayer insulating layer to be respectively connected to differentportions of the active layer, and a via layer covering the sourceelectrode and the drain electrode, each of the gate insulating layer,the interlayer insulating layer and the via layer extending from thethin film transistor to outside the thin film transistor, the organicinsulation layer of the display panel comprises the gate insulatinglayer, the interlayer insulating layer and the via layer, a portion ofthe organic insulation layer including the gate insulating layer, theinterlayer insulating layer and the via layer is exposed to outside thedisplay panel, and the metal oxide layer is on the exposed portion ofthe organic insulation layer including the gate insulating layer, theinterlayer insulating layer and the via layer.
 6. The flexible organiclight-emitting display device of claim 2, wherein a portion of theorganic pixel-defining layer is exposed to outside the display panel,and the metal oxide layer is on the exposed portion of the organicpixel-defining layer.
 7. The flexible organic light-emitting displaydevice of claim 2, wherein a portion of the organic encapsulation layeris exposed to outside the display panel, and the metal oxide layer is onthe exposed portion of the organic encapsulation layer.
 8. A method ofmanufacturing a flexible organic light-emitting display device, themethod comprising: providing a display panel which displays an imagewith light, comprising: providing an organic light-emitting device whichemits the light, and stacking a plurality of organic layers around theorganic light-emitting device, portions of the plurality of organiclayers being exposed to outside the display panel; and forming a metaloxide layer on the exposed portions of the plurality of organic layers,by using a sequential vapor deposition method.
 9. The method of claim 8,wherein the plurality of organic layers comprise: an organic basesubstrate on which the organic light-emitting device is disposed, anorganic pixel-defining layer which defines a pixel region of the organiclight-emitting device, on the organic base substrate, an organicinsulation layer of a thin film transistor connected to the organiclight-emitting device, on the organic base substrate, and an organicencapsulation layer of a thin film encapsulation layer which covers theorganic light-emitting device, the organic encapsulation layer disposedopposite to the organic base substrate with respect to thelight-emitting device.
 10. The method of claim 9, wherein the providinga display panel further comprises defining a light-emitting region inplurality each including the thin film transistor and the organiclight-emitting device, on the organic base substrate, the stacking theplurality of organic layers comprises forming an accommodation hole atan area between adjacent light-emitting regions, by removing a portionof the plurality of the organic layers of the display panel, at the areabetween adjacent light-emitting regions, the forming the accommodationhole comprises exposing to outside the display panel, at the areabetween adjacent light-emitting regions, a portion of the organic basesubstrate and the portions of the plurality of organic layers, and theforming the metal oxide layer disposes the metal oxide layer on theexposed portions of the plurality of organic layers.
 11. The method ofclaim 10, wherein the metal oxide layer is formed on the exposed portionof the organic base substrate.
 12. The method of claim 9, wherein thethin film transistor comprises: an active layer on the organic basesubstrate, a gate insulating layer covering the active layer, a gateelectrode on the gate insulating layer and facing the active layer, aninterlayer insulating layer covering the gate electrode, a sourceelectrode and a drain electrode on the interlayer insulating layer to berespectively connected to different portions of the active layer, and avia layer covering the source electrode and the drain electrode, each ofthe gate insulating layer, the interlayer insulating layer and the vialayer extending from the thin film transistor to outside the thin filmtransistor, the organic insulation layer of the display panel comprisesthe gate insulating layer, the interlayer insulating layer and the vialayer, a portion of the organic insulation layer including the gateinsulating layer, the interlayer insulating layer and the via layer isexposed to outside the display panel, and the metal oxide layer isformed on the exposed portion of the organic insulation layer includingthe gate insulating layer, the interlayer insulating layer and the vialayer.
 13. The method of claim 9, wherein a portion of the organicpixel-defining layer is exposed to outside the display panel, and themetal oxide layer is formed on the exposed portion of the organicpixel-defining layer.
 14. The method of claim 9, wherein a portion ofthe organic encapsulation layer is exposed to outside the display panel,and the metal oxide layer is formed on the exposed portion of theorganic encapsulation layer.
 15. A flexible organic light-emittingdisplay device comprising: a display panel which displays an image withlight, comprising: an organic light-emitting device which emits thelight; a thin film transistor connected to the organic light-emittingdevice to control the organic light-emitting device to emit the light; aplurality of light-emitting regions each including the organiclight-emitting device and the thin film transistor connected thereto;and a plurality of organic layers disposed in each light emitting-regionincluding the organic light-emitting device and the thin film transistorconnected thereto, the plurality of organic layers extended from thelight-emitting regions to be exposed outside the display panel, and ametal oxide layer on the display panel, the metal oxide layer coveringthe exposed portions of the plurality of organic layers.
 16. Theflexible organic light-emitting display device of claim 15, wherein theplurality of organic layers are extended from the light-emitting regionsto be exposed outside the display panel at an area of the display panelbetween adjacent light-emitting regions.
 17. The flexible organiclight-emitting display device of claim 15, further comprising an organicbase substrate on which the organic light-emitting device, the thin filmtransistor and the plurality of organic layers are each disposed,wherein the organic base substrate is exposed outside the display panelat a same area of the display panel between adjacent light-emittingregions at which the plurality of organic layers are exposed.